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價格：電議
所在地：浙江 杭州市
型號：光電二管
更新時間：2017-03-29
瀏覽次數(shù)：2240
公司地址：中國浙江省杭州市西湖區(qū)申花路789號劍橋公社D座717室
新勢力光電(先生) 經(jīng)理
杭州新勢力光電技術(shù)有限公司（www.NewOpto.com） 是一家專業(yè)從事激光器、光學(xué)測量、光學(xué)元器件、太赫茲系統(tǒng)、化學(xué)分析儀器的市場推廣和技術(shù)服務(wù)，并且提供系統(tǒng)集成和方案定制的綜合性光電技術(shù)服務(wù)商。公司 秉承“誠信、創(chuàng)新、專業(yè)、共贏”理念，努力為中國的光電企業(yè)、科研機構(gòu)、高等院校提供專業(yè)而優(yōu)質(zhì)的技術(shù)、產(chǎn)品和應(yīng)用。我們專注于激光，致力于成為一家值得 信賴和尊重的光電技術(shù)服務(wù)商。
新勢力光電（www.NewOpto.com）面向光電領(lǐng)域的工業(yè)開發(fā)和科學(xué)研究，供應(yīng)如下產(chǎn)品與服務(wù)：激光器：半導(dǎo)體激光器、固體激光器、氣體激光器、光纖激光器、窄線寬激光器、可調(diào)諧激光器、飛秒激光器、Cobolt激光器、Roithner激光器。光學(xué)測量：光束質(zhì)量分析儀、位敏探測系統(tǒng)、光束準(zhǔn)直系統(tǒng)、光譜分析儀器、激光功率計、激光波長計、紅外觀察儀、透鏡分析系統(tǒng)。光學(xué)元器件：激光防護眼鏡、光電探測器、壓力傳感器、濾光片、可飽和吸收鏡、光源/LED、光纖、光學(xué)透鏡、SERS拉曼芯片、單光子計數(shù)器、體布拉格光柵、激光顯示卡。太赫茲系統(tǒng)：Rainbow太赫茲晶體及系統(tǒng)、Batop太赫茲組件及系統(tǒng)、Tydex太赫茲元件。化學(xué)分析儀器：Wilks化學(xué)分析儀器（InfraSpec VFA-IR光譜儀、InfraCal油脂分析儀、InfraRan氣體分析儀、InfraCal Soot Meter煙塵儀）、Scientech電子分析天平。
電話：0571-85152711
傳真：0571-85152722
手機：188-5711-5252
400熱線：400-007-1064
企業(yè)QQ：400-007-1064
郵箱：Sales@NewOpto.com
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UV/blue sensitive photodiodes
|
|||||
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Type No.
|
Active area
|
Dark current
|
Rise time
|
||
|
Chip
|
Package
|
Size
|
Area
|
5V
|
410nm 5V 50Ω
|
|
mm
|
mm2
|
nA
|
ns
|
||
|
PS1-2
|
TO52
|
1.0x1.0
|
1
|
0.01
|
50
|
|
PS1-2
|
LCC6.1
|
1.0x1.0
|
1
|
0.01
|
50
|
|
PC5-2
|
TO5
|
? 2.52
|
5
|
0.3
|
150
|
|
PS7-2
|
TO5
|
2.66x2.66
|
7
|
0.4
|
200
|
|
PC10-2
|
TO5
|
? 3.57
|
10
|
1
|
300
|
|
PS13-2
|
TO5
|
3.5x3.5
|
13
|
1
|
300
|
|
PS33-2
|
TO8
|
5.7x5.7
|
33
|
2
|
600
|
|
PC50-2
|
BNC
|
? 7.98
|
50
|
5
|
1000
|
|
PS100-2
|
BNC
|
10x10
|
100
|
10
|
2000
|
|
PS100-2
|
CERpin
|
10x10
|
100
|
10
|
2000
|
|
Band pass filter modules: PC10-2 TO5i with center wavelength 254nm?or?300nm?or?350nm
|
|||||
|
Blue/green sensitive photodiodes
|
|||||
|
Type No.
|
Active area
|
Dark current
|
Rise time
|
||
|
Chip
|
Package
|
Size
|
Area
|
5V
|
410nm 5V 50Ω
|
|
mm
|
mm2
|
nA
|
ns
|
||
|
PC1-6b
|
TO52S3
|
? 1.13
|
1
|
0.05
|
10
|
|
PC5-6b
|
TO5
|
? 2.52
|
5
|
0.1
|
20
|
|
PS7-6b
|
TO5
|
2.7x2.7
|
7
|
0.15
|
25
|
|
PC10-6b
|
TO5
|
? 3.57
|
10
|
0.2
|
45
|
|
PS13-6b
|
TO5
|
3.5x3.5
|
13
|
0.25
|
50
|
|
PS33-6b
|
TO8
|
5.7x5.7
|
33
|
0.6
|
140
|
|
PS100-6b
|
CERpin
|
10x10
|
100
|
1
|
200
|
|
PS100-6b
|
LCC10S
|
10x10
|
100
|
1
|
200
|
|
Band pass filter modules: PR20-6b TO5i with center wavelength 488nm?or?550nm?or?633nm?or? 680nm
|
|||||
|
High speed photodiodes (for fast rise times at low reverse voltages)
|
|||||
|
Type No.
|
Active area
|
Dark current
|
Rise time
|
||
|
Chip
|
Package
|
Size
|
Area
|
20V
|
850nm 20V 50Ω
|
|
mm
|
mm2
|
nA
|
ns
|
||
|
PS0.25-5
|
LCC6.1
|
0.5x0.5
|
0.25
|
0.1
|
0.4
|
|
PS0.25-5
|
TO52S3
|
0.5x0.5
|
0.25
|
0.1
|
0.4
|
|
PC0.55-5
|
TO52S1
|
? 0.84
|
0.55
|
0.2
|
1
|
|
PC0.55-5
|
LCC6.1
|
? 0.84
|
0.55
|
0.2
|
1
|
|
PS1-5
|
LCC6.1
|
1.0x1.0
|
1
|
0.2
|
1.5
|
|
PS1-5
|
TO52S3
|
1.0x1.0
|
1
|
0.2
|
1.5
|
|
PS7-5
|
TO5
|
2.7x2.7
|
7
|
0.5
|
2
|
|
PS11.9-5
|
TO5
|
3.45x3.45
|
11.9
|
1
|
3
|
|
PC20-5
|
TO8
|
? 5.05
|
20
|
2
|
3.5
|
|
PS33-5
|
TO8
|
5.7x5.7
|
33
|
2
|
3.5
|
|
PS100-5
|
CERpinS
|
10x10
|
100
|
2
|
5
|
|
PS100-5
|
LCC10S
|
10x10
|
100
|
2
|
5
|
|
High speed photodiodes for low voltages (for low operating voltages between 3 and 5 V, making them ideal for VIS and NIR applications in conjunction with CMOS components)
|
|||||
|
Type No.
|
Active area
|
Dark current
|
Rise time
|
||
|
Chip
|
Package
|
Size
|
Area
|
20V
|
850nm 20V 50Ω
|
|
mm
|
mm2
|
nA
|
ns
|
||
|
PS0.25-5t
|
LCC6.1
|
0.5x0.5
|
0.25
|
1
|
0.4
|
|
PC0.55-5t
|
LCC6.1
|
? 0.84
|
0.55
|
5
|
1
|
|
PC0.55-5t
|
T1 3/4
|
? 0.84
|
0.55
|
5
|
1
|
|
PC0.55-5t
|
T1 3/4 black
|
? 0.84
|
0.55
|
5
|
1
|
|
PS1-5t
|
LCC6.1
|
1.0x1.0
|
1
|
1
|
1
|
|
IR photodiodes with min. dark current (for low-capacitance light detection as well as for α, β, ? and X-radiation detection)
|
|||||
|
Type No.
|
Active area
|
Dark current
|
Rise time
|
||
|
Chip
|
Package
|
Size
|
Area
|
10V
|
850nm 10V 50Ω
|
|
mm
|
mm2
|
nA
|
ns
|
||
|
PC1-6
|
TO52S1
|
? 1.13
|
1
|
0.05
|
10
|
|
PC1-6
|
TO52S3
|
? 1.13
|
1
|
0.05
|
10
|
|
PC5-6
|
TO5
|
? 2.52
|
5
|
0.1
|
13
|
|
PS7-6
|
TO5
|
2.66×2.66
|
7
|
0.1
|
15
|
|
PC10-6
|
TO5
|
? 3.57
|
10
|
0.2
|
20
|
|
PS13-6
|
TO5
|
3.5×3.5
|
13
|
0.2
|
20
|
|
PC20-6
|
TO8
|
? 5.05
|
20
|
0.3
|
25
|
|
PC50-6
|
TO8S
|
? 7.98
|
50
|
0.5
|
30
|
|
PS100-6
|
BNC
|
10×10
|
100
|
0.8
|
50
|
|
PS100-6
|
CERpinS
|
10×10
|
100
|
0.8
|
50
|
|
PS100-6
|
LCC10S
|
10×10
|
100
|
0.8
|
50
|
|
IR photodiodes with fully depletable (very low capacitance levels)
|
|||||
|
Type No.
|
Active area
|
Dark current
|
Rise time
|
||
|
Chip
|
Package
|
Size
|
Area
|
10V
|
905nm 10V 50Ω
|
|
mm
|
mm2
|
nA
|
ns
|
||
|
PC5-7
|
TO8i
|
? 2.52
|
5
|
0.05
|
45
|
|
PC10-7
|
TO8i
|
? 3.57
|
10
|
0.1
|
50
|
|
PC20-7
|
TO8Si
|
? 5.05
|
20
|
0.2
|
50
|
|
PS100-7
|
LCC10
|
10×10
|
100
|
1.5
|
50
|
|
QP100-7
|
LCC10
|
10×10
|
4×25
|
0.5
|
50
|
|
Photodiodes for 1064nm (specifically for laser rangefinders, laser-based targeting systems?or?any applications using YAG lasers?or?similar NIR radiation sources)
|
|||||
|
Type No.
|
Active area
|
Dark current
|
Rise time
|
||
|
Chip
|
Package
|
Size
|
Area
|
150V
|
1064nm 150V 50Ω
|
|
mm
|
mm2
|
nA
|
ns
|
||
|
QP22-Q
|
TO8S
|
? 5.3
|
4×5.7
|
1.5
|
5
|
|
QP45-Q
|
TO8S
|
6.7×6.7
|
4×10.96
|
3
|
5
|
|
QP154-Q
|
TO1032i
|
? 14.0
|
4×38.5
|
10
|
6
|
|
PIN Series
|
Optimized for
|
Special features
|
Application
|
|
Series-2
|
200-500 nm
|
UV / Blue enhanced
|
Analytical instruments, readout for scintillators
|
|
Series-6b
|
400-650 nm
|
Blue / Green enhanced
|
Photometric illuminometer
|
|
Series-5b
|
360-550 nm
|
High-speed Epitaxy, blue / green enhanced
|
Optical fiber communication, high speed photometry
|
|
Series-5t
|
400-850 nm
|
High-speed Epitaxy, low voltage (3.5V)
|
|
|
Series-5
|
450-950 nm
|
High-speed Epitaxy
|
|
|
Series-6
|
700-950 nm
|
General purpose, low dark current, fast response
|
Precision photometry, analytical instruments
|
|
Series-7
|
700-1100 nm
|
Low capacity, full depletable
|
High energy physics
|
|
Series-Q
|
900-1100 nm
|
Enhanced NIR sensitivity, low voltage, full depletable
|
YAG laser detection
|
|
Series-i
|
600-1700 nm
|
InGaAs photodiodes, high IR sensitivity, low dark current
|
Eye-sate laser detection
|
|
Series-X
|
Ionizing radiation
|
With?or?without scintillator, ultra
|
Medical, security, material
|
免責(zé)聲明：以上所展示的[光電二管 光電二管]信息由會員[杭州新勢力光電技術(shù)有限公司]自行提供，內(nèi)容的真實性、準(zhǔn)確性和合法性由發(fā)布會員負(fù)責(zé)。
